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2SC4046
Silicon NPN Epitaxial
Application
High voltage amplifier
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C Symbol VCBO VCEO VEBO IC PC * Tj Tstg
1
Ratings 120 120 5 0.2 8 150 -55 to +150
Unit V V V A W C C
2SC4046
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 5 --
1
Typ -- -- -- -- -- -- -- 350 3.5
Max -- -- -- 10 800 1.0 1.0 -- --
Unit V V V A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 80 V, IE = 0 VCE = 5 V, IC = 10 mA
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Grade hFE V(BR)EBO I CBO hFE* VBE VCE(sat) fT Cob
250 -- -- -- --
V V MHz pF I C = 200 mA, IB = 20 mA VCE = 10 V, IC = 50 mA VCB = 30 V, f = 1 MHz, IE = 0
1. The 2SC4046 is grouped by h FE as follows. D 250 to 500 E 400 to 800
Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 10 8 6 4 2 0.01 0 50 100 Case Temperature TC (C) 150 1 1.0
Area of Safe Operation
Single Pulse Ta = 25C
PW =1
(25 V, 0.4 A)
Collector Current IC (A)
ms
(80 V, 0.125 A) DC Operation TC = 25C (80 V, 0.1 A) (120 V, 0.055 A) (120 V, 0.05 A)
0.1
10 100 1,000 Collector to emitter Voltage VCE (V)
2
2SC4046
DC Current Transfer Ratio vs. Collector Current 1,000 DC current transfer ratio hFE 120 Collector Current IC (mA) 80 100 60 80 60 40 40 20 IB = 0 0 4 8 12 18 20 Collector to emitter Voltage VCE (V) 1 20 A
Typical Output Characteristics 100
Ta = 75C 100 -25 25
10
VCE = 10 V Pulse Test 10 100 Collector current IC (mA) 1,000
Base to Emitter Voltage vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) 10 VCE = 10 V Pulse Test 10
Collector to Emitter Saturation Voltage vs. Collector Current IC/IB = 10 Pulse Test 1.0 Ta = 75C 25 0.1 -25 0.01
Base to emitter voltage VBE (V)
1.0
Ta = -25C 75 25
0.1 1 10 100 Collector current IC (mA) 1,000
1
10 100 Collector current IC (mA)
1,000
3
2SC4046
Gain Bandwidth Product vs. Collector Current Gain bandwidth product fT (MHz) VCE = 20 V Collector output capacitance Cob (pF) 1,000 100 50 f = 1 MHz IE = 0 Collector Output Capacitance vs. Collector to Base Voltage
100
5 10 Pulse Test
20 10 5
10
2 1 1 2 5 10 20 50 100 Collector to base voltage VCB (V)
1 1 2 5 10 20 50 Collector current IC (mA) 100
4
Unit: mm
8.0 0.5
0
12
3.1 +0.15 -0.1 3.7 0.7 11.0 0.5
2.7 0.4
12
0
2.3 0.3
120
1.1 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-126 Mod -- -- 0.67 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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